Epitaxial growth of transition metal nitrides by reactive sputtering
Implementing transition metal nitride (TM-nitride) layers by epitaxy into group-III nitride semiconductor layer structures may solve substantial persisting problems for electronic and optoelectronic device configurations and subsequently enable new device classes in the favorable nitride semiconduct...
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Main Authors: | Florian Hörich, Christopher Lüttich, Jona Grümbel, Jürgen Bläsing, Martin Feneberg, Armin Dadgar, Rüdiger Goldhahn, André Strittmatter |
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Format: | Article |
Language: | English |
Published: |
Frontiers Media S.A.
2025-01-01
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Series: | Frontiers in Materials |
Subjects: | |
Online Access: | https://www.frontiersin.org/articles/10.3389/fmats.2025.1507123/full |
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