Epitaxial growth of transition metal nitrides by reactive sputtering

Epitaxial growth of transition metal nitrides by reactive sputtering

Implementing transition metal nitride (TM-nitride) layers by epitaxy into group-III nitride semiconductor layer structures may solve substantial persisting problems for electronic and optoelectronic device configurations and subsequently enable new device classes in the favorable nitride semiconduct...

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Bibliographic Details
Main Authors: Florian Hörich, Christopher Lüttich, Jona Grümbel, Jürgen Bläsing, Martin Feneberg, Armin Dadgar, Rüdiger Goldhahn, André Strittmatter
Format: Article
Language:English
Published: Frontiers Media S.A. 2025-01-01
Series:Frontiers in Materials
Subjects:
sputter epitaxy
transition metal nitrides
group III-nitrides
x-ray diffraction
vertical GaN on Si electronics
Online Access:https://www.frontiersin.org/articles/10.3389/fmats.2025.1507123/full
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https://www.frontiersin.org/articles/10.3389/fmats.2025.1507123/full

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