Electrical Response of CdS Thin Film and CdS/Si Heterojunction to Gamma Radiation
Gamma irradiation method has been used to change the electrical properties of CdS thin film. A specific dose of γ-irradiation increases the activation energy of CdS thin film. In addition, γ-irradiation was used to change the sign of Hall coefficient, RH, of CdS thin film from negative to positive i...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2016-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2016/3183909 |
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| author | M. R. Balboul A. Abdel-Galil I. S. Yahia A. Sharaf |
| author_facet | M. R. Balboul A. Abdel-Galil I. S. Yahia A. Sharaf |
| author_sort | M. R. Balboul |
| collection | DOAJ |
| description | Gamma irradiation method has been used to change the electrical properties of CdS thin film. A specific dose of γ-irradiation increases the activation energy of CdS thin film. In addition, γ-irradiation was used to change the sign of Hall coefficient, RH, of CdS thin film from negative to positive irrespective of temperature. The Hall mobility mechanism shows noticeable change after γ-irradiation from decreasing to increasing with raising the temperature. In depth, analysis was done using capacitance-voltage measurement in order to realize the modification in the CdS/Si junction band gap after γ-irradiation. Several parameters were also studied such as charge carrier concentration, ND, and flat band potential, Vfb. The γ-irradiation was found to increase the concentration of the deep traps within the band gap of the CdS/Si heterojunction. |
| format | Article |
| id | doaj-art-bc70560c24f340eaa2fa0f69fe5e6fcc |
| institution | Kabale University |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2016-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-bc70560c24f340eaa2fa0f69fe5e6fcc2025-02-03T01:31:09ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422016-01-01201610.1155/2016/31839093183909Electrical Response of CdS Thin Film and CdS/Si Heterojunction to Gamma RadiationM. R. Balboul0A. Abdel-Galil1I. S. Yahia2A. Sharaf3Solid State and Accelerators Department, NCRRT, Atomic Energy Authority, P.O. Box 29, Nasr City, Cairo, EgyptSolid State and Accelerators Department, NCRRT, Atomic Energy Authority, P.O. Box 29, Nasr City, Cairo, EgyptPhysics Department, Faculty of Education, Ain Shams University, P.O. Box 29, Nasr City, Cairo, EgyptRadiation Engineering Department, NCRRT, Atomic Energy Authority, P.O. Box 29, Nasr City, Cairo, EgyptGamma irradiation method has been used to change the electrical properties of CdS thin film. A specific dose of γ-irradiation increases the activation energy of CdS thin film. In addition, γ-irradiation was used to change the sign of Hall coefficient, RH, of CdS thin film from negative to positive irrespective of temperature. The Hall mobility mechanism shows noticeable change after γ-irradiation from decreasing to increasing with raising the temperature. In depth, analysis was done using capacitance-voltage measurement in order to realize the modification in the CdS/Si junction band gap after γ-irradiation. Several parameters were also studied such as charge carrier concentration, ND, and flat band potential, Vfb. The γ-irradiation was found to increase the concentration of the deep traps within the band gap of the CdS/Si heterojunction.http://dx.doi.org/10.1155/2016/3183909 |
| spellingShingle | M. R. Balboul A. Abdel-Galil I. S. Yahia A. Sharaf Electrical Response of CdS Thin Film and CdS/Si Heterojunction to Gamma Radiation Advances in Materials Science and Engineering |
| title | Electrical Response of CdS Thin Film and CdS/Si Heterojunction to Gamma Radiation |
| title_full | Electrical Response of CdS Thin Film and CdS/Si Heterojunction to Gamma Radiation |
| title_fullStr | Electrical Response of CdS Thin Film and CdS/Si Heterojunction to Gamma Radiation |
| title_full_unstemmed | Electrical Response of CdS Thin Film and CdS/Si Heterojunction to Gamma Radiation |
| title_short | Electrical Response of CdS Thin Film and CdS/Si Heterojunction to Gamma Radiation |
| title_sort | electrical response of cds thin film and cds si heterojunction to gamma radiation |
| url | http://dx.doi.org/10.1155/2016/3183909 |
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