Electrical Response of CdS Thin Film and CdS/Si Heterojunction to Gamma Radiation
Gamma irradiation method has been used to change the electrical properties of CdS thin film. A specific dose of γ-irradiation increases the activation energy of CdS thin film. In addition, γ-irradiation was used to change the sign of Hall coefficient, RH, of CdS thin film from negative to positive i...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2016-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2016/3183909 |
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