Pressure-induced alterations in the electrical characteristics of InP semiconductors
We studied the effects of pressure on indium phosphide (InP) semiconductors using powder samples subjected to a pressure range of 0–25 GPa. We analyzed AC impedance, relaxation frequencies, and resistivity at different temperatures to understand how the samples change during metallization. The resul...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-04-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0266971 |
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