The Electronic Structure of Gax In 1-x As and InASx P1-x Using the Recursion Method
The calculation of the electronic structure of Gax In 1-x As and In Asx P1-x alloys using the recursion method is reported. A five-orbitals, sp3s*, per atom model is used in the tight-binding representation of the Hamiltonian. The local density of states is calculated for Ca, In, As and P-sites in a...
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| Format: | Article |
| Language: | English |
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An-Najah National University
1995-09-01
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| Series: | مجلة جامعة النجاح للأبحاث العلوم الطبيعية |
| Online Access: | https://journals.najah.edu/media/journals/full_texts/electronic-structure-gax-1-x-and-inasx-p1-x-using-recursion-method.pdf |
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