Understanding ferroelectricity in sputtered aluminum nitride thin films on silicon
We report ferroelectric switching at room temperature in sub-100 nm aluminum nitride thin films deposited using radio frequency magnetron sputtering in a metal–insulator–metal configuration. The film microstructures were investigated using transmission electron microscopy. Ferroelectric characterist...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2025-05-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0246797 |
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| author | Vamshi Kiran Gogi Christopher Chae Abhijeet Barua Jinwoo Hwang Rashmi Jha |
| author_facet | Vamshi Kiran Gogi Christopher Chae Abhijeet Barua Jinwoo Hwang Rashmi Jha |
| author_sort | Vamshi Kiran Gogi |
| collection | DOAJ |
| description | We report ferroelectric switching at room temperature in sub-100 nm aluminum nitride thin films deposited using radio frequency magnetron sputtering in a metal–insulator–metal configuration. The film microstructures were investigated using transmission electron microscopy. Ferroelectric characteristics have been investigated through dynamic hysteresis mode and positive-up-negative-down techniques that underscore contributions from leakage current showing the overestimated remnant polarization (Pr > 100 μC/cm2) values. True ferroelectric switching characterization shows a complete polarization reversal with a Pr of ∼90 μC/cm2. The interface trap density (Dit) at the AlN/Si interface in the metal–insulator–semiconductor configuration is estimated to be 6.91 × 1013 cm−2 eV−1 using conductance spectroscopy, indicating flatband voltage (∆Vfb) shifts dominated by charge trapping. |
| format | Article |
| id | doaj-art-fe2444de63b84b568ffd3e3cf0df50da |
| institution | OA Journals |
| issn | 2166-532X |
| language | English |
| publishDate | 2025-05-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj-art-fe2444de63b84b568ffd3e3cf0df50da2025-08-20T01:58:41ZengAIP Publishing LLCAPL Materials2166-532X2025-05-01135051122051122-710.1063/5.0246797Understanding ferroelectricity in sputtered aluminum nitride thin films on siliconVamshi Kiran Gogi0Christopher Chae1Abhijeet Barua2Jinwoo Hwang3Rashmi Jha4Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, Ohio 45221, USADepartment of Material Science and Engineering, Ohio State University, Columbus, Ohio 43210, USAIntel Corporation, Hillsboro, Oregon 97124, USADepartment of Material Science and Engineering, Ohio State University, Columbus, Ohio 43210, USADepartment of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, Ohio 45221, USAWe report ferroelectric switching at room temperature in sub-100 nm aluminum nitride thin films deposited using radio frequency magnetron sputtering in a metal–insulator–metal configuration. The film microstructures were investigated using transmission electron microscopy. Ferroelectric characteristics have been investigated through dynamic hysteresis mode and positive-up-negative-down techniques that underscore contributions from leakage current showing the overestimated remnant polarization (Pr > 100 μC/cm2) values. True ferroelectric switching characterization shows a complete polarization reversal with a Pr of ∼90 μC/cm2. The interface trap density (Dit) at the AlN/Si interface in the metal–insulator–semiconductor configuration is estimated to be 6.91 × 1013 cm−2 eV−1 using conductance spectroscopy, indicating flatband voltage (∆Vfb) shifts dominated by charge trapping.http://dx.doi.org/10.1063/5.0246797 |
| spellingShingle | Vamshi Kiran Gogi Christopher Chae Abhijeet Barua Jinwoo Hwang Rashmi Jha Understanding ferroelectricity in sputtered aluminum nitride thin films on silicon APL Materials |
| title | Understanding ferroelectricity in sputtered aluminum nitride thin films on silicon |
| title_full | Understanding ferroelectricity in sputtered aluminum nitride thin films on silicon |
| title_fullStr | Understanding ferroelectricity in sputtered aluminum nitride thin films on silicon |
| title_full_unstemmed | Understanding ferroelectricity in sputtered aluminum nitride thin films on silicon |
| title_short | Understanding ferroelectricity in sputtered aluminum nitride thin films on silicon |
| title_sort | understanding ferroelectricity in sputtered aluminum nitride thin films on silicon |
| url | http://dx.doi.org/10.1063/5.0246797 |
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