Understanding ferroelectricity in sputtered aluminum nitride thin films on silicon
We report ferroelectric switching at room temperature in sub-100 nm aluminum nitride thin films deposited using radio frequency magnetron sputtering in a metal–insulator–metal configuration. The film microstructures were investigated using transmission electron microscopy. Ferroelectric characterist...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-05-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0246797 |
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