First-principles study on the stability, electronic structure, and optical properties of neutral phosphorus-related point defects in 4H–SiC
Doping-induced point defects have the capacity to alter physical performances of host semiconductors such as silicon carbide (SiC). Nevertheless, structural and functional characterization of the defects lacks comprehensiveness, which impedes determination of influence from the defects on hosts. In...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-04-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0266074 |
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