Neural‐Network Potential for Defect Formation Induced by Knock‐On Irradiation Damage in 4H‐SiC
Abstract Understanding the microscopic mechanism of the irradiation damage in silicon carbide (SiC) is of great importance for improving the irradiation resistance and the ion implantation processes of SiC‐based devices. Currently, the atomic‐scale simulations of the cascade collisions caused by irr...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-07-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202400911 |
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