A Comprehensive Compact Model for Multilevel Switching in TaOx-Based Memristive 1T-1R Cells
Filamentary switching memristive devices based on the valence change mechanism (VCM) are promising for non-volatile memory applications due to their ability to store multiple resistance states within a single device. To facilitate the integration into circuits, this study presents an advanced compac...
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IEEE
2025-01-01
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| Online Access: | https://ieeexplore.ieee.org/document/11083528/ |
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| author | Seokki Son Ankit Bende Daniel Schon Rana Walied Ahmad Dennis Nielinger Vikas Rana Stephan Menzel |
| author_facet | Seokki Son Ankit Bende Daniel Schon Rana Walied Ahmad Dennis Nielinger Vikas Rana Stephan Menzel |
| author_sort | Seokki Son |
| collection | DOAJ |
| description | Filamentary switching memristive devices based on the valence change mechanism (VCM) are promising for non-volatile memory applications due to their ability to store multiple resistance states within a single device. To facilitate the integration into circuits, this study presents an advanced compact model designed for multilevel switching in the VCM devices serially connected with transistors in a 1T-1R configuration. This model is an extension of the existing JART (Jülich Aachen Resistive Switching Tools) VCM v1b model, by incorporating state-dependent effective thermal resistance (<inline-formula> <tex-math notation="LaTeX">$R_{\mathrm {th,eff}}$ </tex-math></inline-formula>) based on an electro-thermal continuum model. This enables precise modeling of multilevel behavior and includes the variability in switching cycles to reflect experimental conditions. The validation with TaOx-based VCM devices co-integrated with 180 nm n-MOS transistors demonstrates the model’s accuracy, achieving consistent multilevel programming across 7-states and capturing cycle-to-cycle variability effectively. This model offers a robust tool for designing reliable, high-density multilevel ReRAM memory system. |
| format | Article |
| id | doaj-art-fd2ce41c6ed540b5a65b0117763cded8 |
| institution | DOAJ |
| issn | 2169-3536 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
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| series | IEEE Access |
| spelling | doaj-art-fd2ce41c6ed540b5a65b0117763cded82025-08-20T03:14:02ZengIEEEIEEE Access2169-35362025-01-011312728012729110.1109/ACCESS.2025.359014011083528A Comprehensive Compact Model for Multilevel Switching in TaOx-Based Memristive 1T-1R CellsSeokki Son0https://orcid.org/0000-0003-4478-3775Ankit Bende1https://orcid.org/0009-0008-6434-7667Daniel Schon2https://orcid.org/0000-0002-6967-0032Rana Walied Ahmad3https://orcid.org/0000-0002-0445-8110Dennis Nielinger4https://orcid.org/0000-0002-7540-7062Vikas Rana5https://orcid.org/0000-0001-5432-0286Stephan Menzel6https://orcid.org/0000-0002-4258-2673Peter Grünberg Institute 7 (PGI-7), Forschungszentrum Jülich, Jülich, GermanyPeter Grünberg Institute 7 (PGI-7), Forschungszentrum Jülich, Jülich, GermanyPeter Grünberg Institute 7 (PGI-7), Forschungszentrum Jülich, Jülich, GermanyPeter Grünberg Institute 7 (PGI-7), Forschungszentrum Jülich, Jülich, GermanyPeter Grünberg Institute 4 (PGI-4), Forschungszentrum Jülich, Jülich, GermanyPeter Grünberg Institute 10 (PGI-10), Forschungszentrum Jülich, Jülich, GermanyPeter Grünberg Institute 7 (PGI-7), Forschungszentrum Jülich, Jülich, GermanyFilamentary switching memristive devices based on the valence change mechanism (VCM) are promising for non-volatile memory applications due to their ability to store multiple resistance states within a single device. To facilitate the integration into circuits, this study presents an advanced compact model designed for multilevel switching in the VCM devices serially connected with transistors in a 1T-1R configuration. This model is an extension of the existing JART (Jülich Aachen Resistive Switching Tools) VCM v1b model, by incorporating state-dependent effective thermal resistance (<inline-formula> <tex-math notation="LaTeX">$R_{\mathrm {th,eff}}$ </tex-math></inline-formula>) based on an electro-thermal continuum model. This enables precise modeling of multilevel behavior and includes the variability in switching cycles to reflect experimental conditions. The validation with TaOx-based VCM devices co-integrated with 180 nm n-MOS transistors demonstrates the model’s accuracy, achieving consistent multilevel programming across 7-states and capturing cycle-to-cycle variability effectively. This model offers a robust tool for designing reliable, high-density multilevel ReRAM memory system.https://ieeexplore.ieee.org/document/11083528/Compact modelmemristive devicethermal effective resistancemulti-level switching1T-1R cellvalence change mechanism (VCM) |
| spellingShingle | Seokki Son Ankit Bende Daniel Schon Rana Walied Ahmad Dennis Nielinger Vikas Rana Stephan Menzel A Comprehensive Compact Model for Multilevel Switching in TaOx-Based Memristive 1T-1R Cells IEEE Access Compact model memristive device thermal effective resistance multi-level switching 1T-1R cell valence change mechanism (VCM) |
| title | A Comprehensive Compact Model for Multilevel Switching in TaOx-Based Memristive 1T-1R Cells |
| title_full | A Comprehensive Compact Model for Multilevel Switching in TaOx-Based Memristive 1T-1R Cells |
| title_fullStr | A Comprehensive Compact Model for Multilevel Switching in TaOx-Based Memristive 1T-1R Cells |
| title_full_unstemmed | A Comprehensive Compact Model for Multilevel Switching in TaOx-Based Memristive 1T-1R Cells |
| title_short | A Comprehensive Compact Model for Multilevel Switching in TaOx-Based Memristive 1T-1R Cells |
| title_sort | comprehensive compact model for multilevel switching in taox based memristive 1t 1r cells |
| topic | Compact model memristive device thermal effective resistance multi-level switching 1T-1R cell valence change mechanism (VCM) |
| url | https://ieeexplore.ieee.org/document/11083528/ |
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