A Comprehensive Compact Model for Multilevel Switching in TaOx-Based Memristive 1T-1R Cells

A Comprehensive Compact Model for Multilevel Switching in TaOx-Based Memristive 1T-1R Cells

Filamentary switching memristive devices based on the valence change mechanism (VCM) are promising for non-volatile memory applications due to their ability to store multiple resistance states within a single device. To facilitate the integration into circuits, this study presents an advanced compac...

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Bibliographic Details
Main Authors: Seokki Son, Ankit Bende, Daniel Schon, Rana Walied Ahmad, Dennis Nielinger, Vikas Rana, Stephan Menzel
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Access
Subjects:
Compact model
memristive device
thermal effective resistance
multi-level switching
1T-1R cell
valence change mechanism (VCM)
Online Access:https://ieeexplore.ieee.org/document/11083528/
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https://ieeexplore.ieee.org/document/11083528/

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