TCAD Simulation of Two Photon Absorption—Transient Current Technique Measurements on Silicon Detectors and LGADs

Device simulation plays a crucial role in complementing experimental device characterisation by enabling deeper understanding of internal physical processes. However, for simulations to be trusted, experimental validation is essential to confirm the accuracy of the conclusions drawn. In the framewor...

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Bibliographic Details
Main Authors: Sebastian Pape, Michael Moll, Marcos Fernández García, Moritz Wiehe
Format: Article
Language:English
Published: MDPI AG 2024-12-01
Series:Sensors
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Online Access:https://www.mdpi.com/1424-8220/24/24/8032
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