Structural Features of Porous Silicon Formed on Heavily Doped Plates of Single-Crystal Silicon with Electron Conductivity

Structural Features of Porous Silicon Formed on Heavily Doped Plates of Single-Crystal Silicon with Electron Conductivity

Using scanning electron microscopy, the structures of the surface and internal regions of porous silicon obtained by anodizing heavily doped plates of single-crystal silicon with electron conductivity in a hydrofluoric acid solution at different current densities were studied. It is found that the por...

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Bibliographic Details
Main Authors: U. P. Lopato, D. D. Laputko, N. L. Grevtsov, V. P. Bondarenko
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2024-10-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
scanning electron microscopy
image analysis
electrochemical anodizing
anodic current density
porous silicon
pore density
equivalent diameter
Online Access:https://doklady.bsuir.by/jour/article/view/3977
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