Design Device for Subthreshold Slope in DG Fully Depleted SOI MOSFET
In this paper, we discuss how a short channel effects can be suppressed and how a threshold voltage fluctuation can be minimized and better control of subthreshold slope by the impact of the back gate bias and control of gate work function of a fully depleted SOI (Silicon-On-Insulator) MOSFET. The f...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2017-02-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2017/1/articles/jnep_V9_01022.pdf |
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