Electrically Active Defects in 3C, 4H, and 6H Silicon Carbide Polytypes: A Review
This paper aims to critically review electrically active defects studied by junction spectroscopy techniques (deep-level transient spectroscopy and minority carrier transient spectroscopy) in the three most commonly used silicon carbide (SiC) polytypes: 3C-SiC, 4H-SiC, and 6H-SiC. Given the dominant...
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| Format: | Article |
| Language: | English |
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MDPI AG
2025-03-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/15/3/255 |
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