Pd-Gated N-Polar GaN/AlGaN High-Electron-Mobility Transistor for High-Sensitivity Hydrogen Gas Detection
Hydrogen gas sensing is critical for energy storage, industrial safety, and environmental monitoring. However, traditional sensors still face challenges in selectivity, sensitivity, and stability. This work introduces an innovative N-polar GaN/AlGaN high-electron-mobility transistor (HEMT) with a 10...
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MDPI AG
2025-06-01
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| Online Access: | https://www.mdpi.com/2073-4352/15/6/578 |
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| author | Long Ge Haineng Bai Yidi Teng Xifeng Yang |
| author_facet | Long Ge Haineng Bai Yidi Teng Xifeng Yang |
| author_sort | Long Ge |
| collection | DOAJ |
| description | Hydrogen gas sensing is critical for energy storage, industrial safety, and environmental monitoring. However, traditional sensors still face challenges in selectivity, sensitivity, and stability. This work introduces an innovative N-polar GaN/AlGaN high-electron-mobility transistor (HEMT) with a 10 nm Pd catalytic layer as a hydrogen sensor. The device achieves ppm-level H<sub>2</sub> detection with rapid recovery and reusability, which is comparable to or even exceeds the performance of conventional Ga-polar HEMTs. The N-polar structure enhances sensitivity through its unique polarization-induced 2DEG and intrinsic back barrier, while the Pd layer catalyzes H<sub>2</sub> dissociation, forming a dipole layer that can modulate the Schottky barrier height. Experimental results demonstrate superior performance at both room temperature and elevated temperatures. Specifically, at 200 °C, the sensor exhibits a response of 102% toward 200 ppm H<sub>2</sub>, with response/recovery times of 150 s/17 s. This represents a 96% enhancement in sensitivity and a reduction of 180 s/14 s in response/recovery times compared to room-temperature conditions (23 °C). These findings highlight the potential of N-polar HEMTs for high-performance hydrogen sensing applications. |
| format | Article |
| id | doaj-art-f8ea12e67f8b49ba95f5c0fa6d73240b |
| institution | Kabale University |
| issn | 2073-4352 |
| language | English |
| publishDate | 2025-06-01 |
| publisher | MDPI AG |
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| series | Crystals |
| spelling | doaj-art-f8ea12e67f8b49ba95f5c0fa6d73240b2025-08-20T03:24:39ZengMDPI AGCrystals2073-43522025-06-0115657810.3390/cryst15060578Pd-Gated N-Polar GaN/AlGaN High-Electron-Mobility Transistor for High-Sensitivity Hydrogen Gas DetectionLong Ge0Haineng Bai1Yidi Teng2Xifeng Yang3School of Electronic and Information Engineering, Suzhou University of Technology, Changshu 215500, ChinaSchool of Physics and Telecommunication Engineering, Zhoukou Normal University, Zhoukou 466001, ChinaSchool of Electronic and Information Engineering, Suzhou University of Technology, Changshu 215500, ChinaSchool of Electronic and Information Engineering, Suzhou University of Technology, Changshu 215500, ChinaHydrogen gas sensing is critical for energy storage, industrial safety, and environmental monitoring. However, traditional sensors still face challenges in selectivity, sensitivity, and stability. This work introduces an innovative N-polar GaN/AlGaN high-electron-mobility transistor (HEMT) with a 10 nm Pd catalytic layer as a hydrogen sensor. The device achieves ppm-level H<sub>2</sub> detection with rapid recovery and reusability, which is comparable to or even exceeds the performance of conventional Ga-polar HEMTs. The N-polar structure enhances sensitivity through its unique polarization-induced 2DEG and intrinsic back barrier, while the Pd layer catalyzes H<sub>2</sub> dissociation, forming a dipole layer that can modulate the Schottky barrier height. Experimental results demonstrate superior performance at both room temperature and elevated temperatures. Specifically, at 200 °C, the sensor exhibits a response of 102% toward 200 ppm H<sub>2</sub>, with response/recovery times of 150 s/17 s. This represents a 96% enhancement in sensitivity and a reduction of 180 s/14 s in response/recovery times compared to room-temperature conditions (23 °C). These findings highlight the potential of N-polar HEMTs for high-performance hydrogen sensing applications.https://www.mdpi.com/2073-4352/15/6/578N-polarGaN/AlGaNhigh-electron-mobility transistorH<sub>2</sub> sensor |
| spellingShingle | Long Ge Haineng Bai Yidi Teng Xifeng Yang Pd-Gated N-Polar GaN/AlGaN High-Electron-Mobility Transistor for High-Sensitivity Hydrogen Gas Detection Crystals N-polar GaN/AlGaN high-electron-mobility transistor H<sub>2</sub> sensor |
| title | Pd-Gated N-Polar GaN/AlGaN High-Electron-Mobility Transistor for High-Sensitivity Hydrogen Gas Detection |
| title_full | Pd-Gated N-Polar GaN/AlGaN High-Electron-Mobility Transistor for High-Sensitivity Hydrogen Gas Detection |
| title_fullStr | Pd-Gated N-Polar GaN/AlGaN High-Electron-Mobility Transistor for High-Sensitivity Hydrogen Gas Detection |
| title_full_unstemmed | Pd-Gated N-Polar GaN/AlGaN High-Electron-Mobility Transistor for High-Sensitivity Hydrogen Gas Detection |
| title_short | Pd-Gated N-Polar GaN/AlGaN High-Electron-Mobility Transistor for High-Sensitivity Hydrogen Gas Detection |
| title_sort | pd gated n polar gan algan high electron mobility transistor for high sensitivity hydrogen gas detection |
| topic | N-polar GaN/AlGaN high-electron-mobility transistor H<sub>2</sub> sensor |
| url | https://www.mdpi.com/2073-4352/15/6/578 |
| work_keys_str_mv | AT longge pdgatednpolarganalganhighelectronmobilitytransistorforhighsensitivityhydrogengasdetection AT hainengbai pdgatednpolarganalganhighelectronmobilitytransistorforhighsensitivityhydrogengasdetection AT yiditeng pdgatednpolarganalganhighelectronmobilitytransistorforhighsensitivityhydrogengasdetection AT xifengyang pdgatednpolarganalganhighelectronmobilitytransistorforhighsensitivityhydrogengasdetection |