Pd-Gated N-Polar GaN/AlGaN High-Electron-Mobility Transistor for High-Sensitivity Hydrogen Gas Detection

Pd-Gated N-Polar GaN/AlGaN High-Electron-Mobility Transistor for High-Sensitivity Hydrogen Gas Detection

Hydrogen gas sensing is critical for energy storage, industrial safety, and environmental monitoring. However, traditional sensors still face challenges in selectivity, sensitivity, and stability. This work introduces an innovative N-polar GaN/AlGaN high-electron-mobility transistor (HEMT) with a 10...

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Bibliographic Details
Main Authors: Long Ge, Haineng Bai, Yidi Teng, Xifeng Yang
Format: Article
Language:English
Published: MDPI AG 2025-06-01
Series:Crystals
Subjects:
N-polar
GaN/AlGaN
high-electron-mobility transistor
H<sub>2</sub> sensor
Online Access:https://www.mdpi.com/2073-4352/15/6/578
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