Ge, L., Bai, H., Teng, Y., & Yang, X. Pd-Gated N-Polar GaN/AlGaN High-Electron-Mobility Transistor for High-Sensitivity Hydrogen Gas Detection. MDPI AG.
Chicago Style (17th ed.) CitationGe, Long, Haineng Bai, Yidi Teng, and Xifeng Yang. Pd-Gated N-Polar GaN/AlGaN High-Electron-Mobility Transistor for High-Sensitivity Hydrogen Gas Detection. MDPI AG.
MLA (9th ed.) CitationGe, Long, et al. Pd-Gated N-Polar GaN/AlGaN High-Electron-Mobility Transistor for High-Sensitivity Hydrogen Gas Detection. MDPI AG.
Warning: These citations may not always be 100% accurate.