Impact of proton-beam irradiation on the electrical reliability and performance of LTPS and a-IGZO thin-film transistors
Abstract We investigate the impact of 5 MeV proton beam irradiation on the electrical reliability of low-temperature polycrystalline silicon (LTPS) and amorphous In–Ga–Zn–O (a-IGZO) thin-film transistors (TFTs). After irradiation, the threshold voltage (V th) of a-IGZO TFTs shifted from 0.31 to − 7....
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-07-01
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| Series: | Scientific Reports |
| Subjects: | |
| Online Access: | https://doi.org/10.1038/s41598-025-05664-z |
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