Impact of proton-beam irradiation on the electrical reliability and performance of LTPS and a-IGZO thin-film transistors

Impact of proton-beam irradiation on the electrical reliability and performance of LTPS and a-IGZO thin-film transistors

Abstract We investigate the impact of 5 MeV proton beam irradiation on the electrical reliability of low-temperature polycrystalline silicon (LTPS) and amorphous In–Ga–Zn–O (a-IGZO) thin-film transistors (TFTs). After irradiation, the threshold voltage (V th) of a-IGZO TFTs shifted from 0.31 to − 7....

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Bibliographic Details
Main Authors: Junho Noh, Moonsoo Kim, Dongbhin Kim, Sungsoo Park, Hwan-Gyu Lee, Sungwoo Jung, Donghyun Kim, Nguyen Thanh Tien, Byoungdeog Choi
Format: Article
Language:English
Published: Nature Portfolio 2025-07-01
Series:Scientific Reports
Subjects:
Radiation
Electrical reliability
Thin-film transistors (TFTs)
Amorphous In–Ga–Zn–O (a-IGZO)
Low-temperature polycrystalline silicon (LTPS)
Density of state (DOS)
Online Access:https://doi.org/10.1038/s41598-025-05664-z
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https://doi.org/10.1038/s41598-025-05664-z

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