Emergence of Negative Differential Resistance Through Hole Resonant Tunneling in GeSn/GeSiSn Double Barrier Structure

Emergence of Negative Differential Resistance Through Hole Resonant Tunneling in GeSn/GeSiSn Double Barrier Structure

We examined the fabrication and the operation of GeSn/GeSiSn resonant tunneling diode (RTD) and demonstrated the observation of negative differential resistance (NDR) at a low temperature through the hole resonant tunneling. First, we revealed the possible designed contents of GeSiSn to Si and Sn of...

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Bibliographic Details
Main Authors: Shigehisa Shibayama, Shuto Ishimoto, Yoshiki Kato, Mitsuo Sakashita, Masashi Kurosawa, Osamu Nakatsuka
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Germanium (Ge)
germanium-tin (GeSn)
germanium-silicon-tin (GeSiSn)
heterostructure
double barrier structure
epitaxial growth
Online Access:https://ieeexplore.ieee.org/document/10839296/
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