Electrical Behavior of Combinatorial Thin-Film Zr<sub>x</sub>Ta<sub>1−x</sub>O<sub>y</sub>

Electrical Behavior of Combinatorial Thin-Film Zr<sub>x</sub>Ta<sub>1−x</sub>O<sub>y</sub>

Combinatorial magnetron sputtering and electrical characterization were used to systematically study the impact of compositional changes in the resistive switching of transition metal oxides, specifically the Zr<sub>x</sub>Ta<sub>1−x</sub>O<sub>y</sub> system. Cur...

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Bibliographic Details
Main Authors: Matthew Flynn-Hepford, Reece Emery, Steven J. Randolph, Scott T. Retterer, Gyula Eres, Bobby G. Sumpter, Anton V. Ievlev, Olga S. Ovchinnikova, Philip D. Rack
Format: Article
Language:English
Published: MDPI AG 2025-05-01
Series:Nanomaterials
Subjects:
resistive switching
combinatorial sputtering
tantalum oxide
zirconium oxide
thin films
Online Access:https://www.mdpi.com/2079-4991/15/10/732
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