Analytical Model of Random Variation in Drain Current of FGMOSFET
The analytical model of random variation in drain current of the Floating Gate MOSFET (FGMOSFET) has been proposed in this research. The model is composed of two parts for triode and saturation region of operation where the process induced device level random variations of each region and their stat...
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2015-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2015/315105 |
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