Investigation of contact resistivity for Au–Ti–Pd–n-Si ohmic contacts for impatt diodes

Both contact resistivity of Au–Ti–Pd–n-Si ohmic contact and mechanism of current flow are studied in the 100 – 360 K temperature range. A method is proposed for reduction of error in determination of contact resistivity based on analysis of statistical dependences of the measured contact resistivity...

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Bibliographic Details
Main Authors: V. V. Basanets, V. S. Slepokurov, V. V. Shinkarenko, R. Ya. Kudrik, Ya. Ya. Kudrik
Format: Article
Language:English
Published: Politehperiodika 2015-02-01
Series:Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
Subjects:
Online Access:https://tkea.com.ua/index.php/journal/article/view/290
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