Investigation of Short Channel Effects in Al<sub>0.30</sub>Ga<sub>0.60</sub>As Channel-Based Junctionless Cylindrical Gate-All-Around FET for Low Power Applications

In this work, a cylindrical gate-all-around junctionless field effect transistor (JLFET) was investigated. Junctions and doping concentration gradients are unavailable in JLFET. According to the results, the suggested device has a novel architecture that significantly enhances transistor performance...

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Bibliographic Details
Main Authors: Pooja Srivastava, Aditi Upadhyaya, Shekhar Yadav, Chandra Mohan Singh Negi, Arvind Kumar Singh
Format: Article
Language:English
Published: MDPI AG 2025-02-01
Series:Journal of Low Power Electronics and Applications
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Online Access:https://www.mdpi.com/2079-9268/15/1/12
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