WDM-Enabled Optical RAM at 5 Gb/s Using a Monolithic InP Flip-Flop Chip
We experimentally demonstrate an all-optical static random access memory (RAM) cell using a novel monolithic InP set–reset flip-flop (FF) chip and a single hybridly integrated semiconductor optical amplifier-Mach–Zehnder interferometer (SOA-MZI)-based access gate employing wave...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2016-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7400913/ |
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