WDM-Enabled Optical RAM at 5 Gb/s Using a Monolithic InP Flip-Flop Chip

We experimentally demonstrate an all-optical static random access memory (RAM) cell using a novel monolithic InP set–reset flip-flop (FF) chip and a single hybridly integrated semiconductor optical amplifier-Mach–Zehnder interferometer (SOA-MZI)-based access gate employing wave...

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Bibliographic Details
Main Authors: S. Pitris, C. Vagionas, T. Tekin, R. Broeke, G. T. Kanellos, N. Pleros
Format: Article
Language:English
Published: IEEE 2016-01-01
Series:IEEE Photonics Journal
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Online Access:https://ieeexplore.ieee.org/document/7400913/
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