Regional proximity effect correction for replicating 28 nm lines/spaces in HSQ as dielectric diffraction gratings with high aspect ratio
With the rapid advances of extreme ultraviolet (EUV) lithography toward ultra-high resolution, characterization technique of EUV resists by interference lithography (IL) for 14-nm node process needs urgent upgrading because of the considerable loss of light transmission by metallic grating masks. Di...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-03-01
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| Series: | Micro and Nano Engineering |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590007225000012 |
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