Enhanced Electro‐Resistance and Tunable Asymmetric Depolarization Behavior in Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction by Bottom Oxide Interfacial Layer

Enhanced Electro‐Resistance and Tunable Asymmetric Depolarization Behavior in Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction by Bottom Oxide Interfacial Layer

Abstract Electro‐resistance (ER) plays a crucial role in the application of hafnia‐based ferroelectric tunnel junctions (FTJs), pivotal devices widely acknowledge for their potential in non‐volatile memory and neuromorphic networks. Leveraging atomic layer deposition (ALD) enhances the flexibility i...

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Main Authors: Shuxian Lyu, Xiao Long, Yang Yang, Wei Wei, Yuanxiang Chen, Hong Xie, Bowen Nie, Boping Wang, Yuan Wang, Pengfei Jiang, Tiancheng Gong, Yan Wang, Qing Luo
Format: Article
Language:English
Published: Wiley-VCH 2025-03-01
Series:Advanced Electronic Materials
Subjects:
depolarization field
ferroelectric tunnel junctions
Hf0.5Zr0.5O2
Interlayers
memristive behavior
Online Access:https://doi.org/10.1002/aelm.202400466
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https://doi.org/10.1002/aelm.202400466

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