Modeling of the Gate Bias-Dependent Velocity–Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs
In this paper, a gate bias-dependent velocity-field relationship model and a physics-based analytical model of current-voltage characteristics in AlGaN/GaN HFETs are developed. Based on Monte Carlo simulations, the experimental phenomenon that the channel electron velocity varies with the gate volta...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10401224/ |
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