Modeling of the Gate Bias-Dependent Velocity–Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs

Modeling of the Gate Bias-Dependent Velocity–Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs

In this paper, a gate bias-dependent velocity-field relationship model and a physics-based analytical model of current-voltage characteristics in AlGaN/GaN HFETs are developed. Based on Monte Carlo simulations, the experimental phenomenon that the channel electron velocity varies with the gate volta...

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Bibliographic Details
Main Authors: Mingyan Wang, Yuanjie Lv, Heng Zhou, Peng Cui, Zhaojun Lin
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Access
Subjects:
Monte Carlo
compact model
velocity-field relationship
AlGaN/GaN HFETs
polarization Coulomb field scattering
Online Access:https://ieeexplore.ieee.org/document/10401224/
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https://ieeexplore.ieee.org/document/10401224/

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