Performance of a Double Gate Nanoscale MOSFET (DG-MOSFET) Based on Novel Channel Materials
In this paper, we have studied a double gate nanoscale MOSFET for various channel materials using simulation approach. The device metrics considered at the nanometer scale are subthreshold swing (SS), drain induced barrier lowering (DIBL), on and off current, carrier injection velocity (vinj), etc....
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2013-03-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2013/1/articles/jnep_2013_V5_01017.pdf |
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