Investigation of Isoelectronic Doping in p-GaN Based on the Thermal Quenching of UVL Band
In this paper, isoelectronic doping with indium (In) in p-GaN is investigated on the basis of the thermal quenching of ultraviolet luminescence (UVL) band. A phenomenological rate-equation model is proposed as a nondestructive diagnostic technique to acquire the dopant ionization energy of p-GaN. In...
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| Format: | Article |
| Language: | English |
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IEEE
2016-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/7581116/ |
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| author | Yang Huang Zhiqiang Liu Xiaoyan Yi Yao Guo Guodong Yuan JunXi Wang Guohong Wang Jinmin Li |
| author_facet | Yang Huang Zhiqiang Liu Xiaoyan Yi Yao Guo Guodong Yuan JunXi Wang Guohong Wang Jinmin Li |
| author_sort | Yang Huang |
| collection | DOAJ |
| description | In this paper, isoelectronic doping with indium (In) in p-GaN is investigated on the basis of the thermal quenching of ultraviolet luminescence (UVL) band. A phenomenological rate-equation model is proposed as a nondestructive diagnostic technique to acquire the dopant ionization energy of p-GaN. In terms of this model, we analyze the evolution of the ionization energy of p-GaN samples grown with different trimethyindium flow rate and find that isoelectronic doping with appropriate In incorporation is able to significantly reduce the ionization energy of the acceptor from 245 to 112 meV, which are consistent with the results of the variable temperature Hall-effect measurements. The comparison between the samples’ full width at half maximum of the UVL band indicates that excessive In incorporation will degenerate the conductivity of p-GaN. |
| format | Article |
| id | doaj-art-efe577ad5c2345b5af8bc419e57259cb |
| institution | Kabale University |
| issn | 1943-0655 |
| language | English |
| publishDate | 2016-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-efe577ad5c2345b5af8bc419e57259cb2025-08-20T03:32:37ZengIEEEIEEE Photonics Journal1943-06552016-01-01851710.1109/JPHOT.2016.26149007581116Investigation of Isoelectronic Doping in p-GaN Based on the Thermal Quenching of UVL BandYang Huang0Zhiqiang Liu1Xiaoyan Yi2Yao Guo3Guodong Yuan4JunXi Wang5Guohong Wang6Jinmin Li7R&D Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing, ChinaR&D Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing, ChinaR&D Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing, ChinaR&D Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing, ChinaR&D Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing, ChinaR&D Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing, ChinaR&D Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing, ChinaR&D Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing, ChinaIn this paper, isoelectronic doping with indium (In) in p-GaN is investigated on the basis of the thermal quenching of ultraviolet luminescence (UVL) band. A phenomenological rate-equation model is proposed as a nondestructive diagnostic technique to acquire the dopant ionization energy of p-GaN. In terms of this model, we analyze the evolution of the ionization energy of p-GaN samples grown with different trimethyindium flow rate and find that isoelectronic doping with appropriate In incorporation is able to significantly reduce the ionization energy of the acceptor from 245 to 112 meV, which are consistent with the results of the variable temperature Hall-effect measurements. The comparison between the samples’ full width at half maximum of the UVL band indicates that excessive In incorporation will degenerate the conductivity of p-GaN.https://ieeexplore.ieee.org/document/7581116/GaNisoelectronic dopingthermal quenchingionization energy. |
| spellingShingle | Yang Huang Zhiqiang Liu Xiaoyan Yi Yao Guo Guodong Yuan JunXi Wang Guohong Wang Jinmin Li Investigation of Isoelectronic Doping in p-GaN Based on the Thermal Quenching of UVL Band IEEE Photonics Journal GaN isoelectronic doping thermal quenching ionization energy. |
| title | Investigation of Isoelectronic Doping in p-GaN Based on the Thermal Quenching of UVL Band |
| title_full | Investigation of Isoelectronic Doping in p-GaN Based on the Thermal Quenching of UVL Band |
| title_fullStr | Investigation of Isoelectronic Doping in p-GaN Based on the Thermal Quenching of UVL Band |
| title_full_unstemmed | Investigation of Isoelectronic Doping in p-GaN Based on the Thermal Quenching of UVL Band |
| title_short | Investigation of Isoelectronic Doping in p-GaN Based on the Thermal Quenching of UVL Band |
| title_sort | investigation of isoelectronic doping in p gan based on the thermal quenching of uvl band |
| topic | GaN isoelectronic doping thermal quenching ionization energy. |
| url | https://ieeexplore.ieee.org/document/7581116/ |
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