Investigation of Isoelectronic Doping in p-GaN Based on the Thermal Quenching of UVL Band
In this paper, isoelectronic doping with indium (In) in p-GaN is investigated on the basis of the thermal quenching of ultraviolet luminescence (UVL) band. A phenomenological rate-equation model is proposed as a nondestructive diagnostic technique to acquire the dopant ionization energy of p-GaN. In...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2016-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7581116/ |
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