Achieving High Ferroelectric Polarization in Ultrathin BaTiO3 Films on Si

Achieving High Ferroelectric Polarization in Ultrathin BaTiO3 Films on Si

Abstract Ferroelectrics show promise for low‐power, non‐volatile memory technologies. However, material challenges in state‐of‐the‐art ferroelectric hafnates and the high coercive fields required limit their application in devices. Scaling of other candidate materials is challenging, often requiring...

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Bibliographic Details
Main Authors: Pratik Bagul, Han Han, Pieter Lagrain, Stefanie Sergeant, Ilse Hoflijk, Jill Serron, Olivier Richard, Thierry Conard, Jan Van Houdt, Ingrid De Wolf, Sean R. C. McMitchell
Format: Article
Language:English
Published: Wiley-VCH 2025-04-01
Series:Advanced Electronic Materials
Subjects:
barium titanate
ferroelectric memories
ferroelectrics
high remanent polarization
platinum silicide
pulsed laser deposition
Online Access:https://doi.org/10.1002/aelm.202400440
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https://doi.org/10.1002/aelm.202400440

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