Barrier Inhomogeneities of Al/p-In2Te3 Thin Film Schottky Diodes
The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of p-In2Te3/Al thin films Schottky diodes papered by Flash Evaporation technique were measured in the temperature range 303-335 K have been interpreted on the basis of the assumption of a Gaussian distribution of barrier heights...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2011-01-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%205/articles/jnep_2011_V3_N1(Part5)_0995-1004.pdf |
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