Ultraviolet Emission From Resonant Tunnelling Metal–Insulator– Semiconductor Light Emitting Tunnel Diodes

Ultraviolet Emission From Resonant Tunnelling Metal–Insulator– Semiconductor Light Emitting Tunnel Diodes

Strong room-temperature electroluminescence at 365&#x00A0;nm has been demonstrated from simple Au&#x002F;AlN&#x002F;<italic> n</italic>-GaN metal&#x2013;insulator&#x2013;semiconductor (MIS) light emitting diodes, which do not contain <italic>p </italic>-do...

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Bibliographic Details
Main Authors: Chen-Sheng Lin, Kate Cavanagh, Hei-Chit L. Tsui, Andrei Mihai, Bin Zou, Duncan W.E. Allsopp, Michelle A. Moram
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Photonics Journal
Subjects:
Resonant tunnelling diodes
ultraviolet light emitting diodes
metal-insulator-semiconductor device
AlN/GaN
electroluminescence
Online Access:https://ieeexplore.ieee.org/document/7947132/
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