Numerical Simulation of the Effect of APCVD Reactor Tilted Ceiling Height on Silicon Epitaxial Layer Thickness Uniformity

Numerical Simulation of the Effect of APCVD Reactor Tilted Ceiling Height on Silicon Epitaxial Layer Thickness Uniformity

As the linewidth of semiconductor nanostructures continues to decrease, the criteria for acceptable surface homogeneity of silicon (Si) epi-films are becoming increasingly stringent. To address this challenge, the effect of different tilted ceiling heights on the Si epi thickness homogeneity in an a...

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Bibliographic Details
Main Authors: Ba-Phuoc Le, Jyh-Chen Chen, Chieh Hu, Wei-Jie Lin, Chun-Chin Tu, Liang-Chin Chen
Format: Article
Language:English
Published: MDPI AG 2025-05-01
Series:Crystals
Subjects:
tilted ceiling
APCVD
CFD
thermal transport
mass transfer
Online Access:https://www.mdpi.com/2073-4352/15/5/477
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