Room-Temperature Magnetoelectric Switching and Magnetoelectric Memory Driven by Gate Voltage

Room-Temperature Magnetoelectric Switching and Magnetoelectric Memory Driven by Gate Voltage

Electric-field control of magnetism is one of the most promising routes for developing the energy-efficient magnetoresistive random access memory and spin-logic devices. Of particular interest is the electric-field-induced 180° perpendicular magnetization switching, which currently remains challengi...

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Bibliographic Details
Main Authors: Yang Cheng, Teng Xu, Di Tian, Xing He, Yiqing Dong, Hao Bai, Le Zhao, Haonan Jin, Shilei Zhang, Weibin Li, Manuel Valvidares, Pu Yu, Wanjun Jiang
Format: Article
Language:English
Published: American Physical Society 2025-03-01
Series:Physical Review X
Online Access:http://doi.org/10.1103/PhysRevX.15.011060
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