Room-Temperature Magnetoelectric Switching and Magnetoelectric Memory Driven by Gate Voltage
Electric-field control of magnetism is one of the most promising routes for developing the energy-efficient magnetoresistive random access memory and spin-logic devices. Of particular interest is the electric-field-induced 180° perpendicular magnetization switching, which currently remains challengi...
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| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Physical Society
2025-03-01
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| Series: | Physical Review X |
| Online Access: | http://doi.org/10.1103/PhysRevX.15.011060 |
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