Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices

Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices

In this manuscript, strontium barium titanate (BST) ferroelectric memory film materials for applications in the feasibility of applying to non-volatile RAM devices were obtained and compared. Solutions were synthesized with a proportional ratio and through the deposition of BST films on titanium nit...

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Bibliographic Details
Main Authors: Yao-Chin Wang, Kai-Huang Chen, Ming-Cheng Kao, Hsin-Chin Chen, Chien-Min Cheng, Hong-Xiang Huang, Kai-Chi Huang
Format: Article
Language:English
Published: MDPI AG 2025-04-01
Series:Nanomaterials
Subjects:
RRAM
BST
bipolar switching properties
thin film
sputtering
Online Access:https://www.mdpi.com/2079-4991/15/8/602
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