Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices
In this manuscript, strontium barium titanate (BST) ferroelectric memory film materials for applications in the feasibility of applying to non-volatile RAM devices were obtained and compared. Solutions were synthesized with a proportional ratio and through the deposition of BST films on titanium nit...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-04-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/15/8/602 |
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