Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices
In this manuscript, strontium barium titanate (BST) ferroelectric memory film materials for applications in the feasibility of applying to non-volatile RAM devices were obtained and compared. Solutions were synthesized with a proportional ratio and through the deposition of BST films on titanium nit...
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MDPI AG
2025-04-01
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| Series: | Nanomaterials |
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| author | Yao-Chin Wang Kai-Huang Chen Ming-Cheng Kao Hsin-Chin Chen Chien-Min Cheng Hong-Xiang Huang Kai-Chi Huang |
| author_facet | Yao-Chin Wang Kai-Huang Chen Ming-Cheng Kao Hsin-Chin Chen Chien-Min Cheng Hong-Xiang Huang Kai-Chi Huang |
| author_sort | Yao-Chin Wang |
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| description | In this manuscript, strontium barium titanate (BST) ferroelectric memory film materials for applications in the feasibility of applying to non-volatile RAM devices were obtained and compared. Solutions were synthesized with a proportional ratio and through the deposition of BST films on titanium nitride/silicon substrates using the sol–gel method, using rapid thermal annealing for defect repair and re-crystallization processing. The crystallization structure and surface morphology of annealed and as-deposited BST films were obtained by XPS, XRD, and SEM measurements. Additionally, the ferroelectric and resistive switching properties for the memory window, the maximum capacitance, and the leakage current were examined for Al/BST/TiN and Cu/BST/TiN structure memory devices. In addition, the first-order reaction equation of the decay reaction behavior for the BST film RRAM devices in the reset state revealed that <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>r</mi><mo>=</mo><mn>0.19</mn><msup><mrow><mo stretchy="false">[</mo><msup><mi>O</mi><mrow><mn>2</mn><mo>−</mo></mrow></msup><mo stretchy="false">]</mo></mrow><mn>1</mn></msup></mrow></semantics></math></inline-formula>. Finally, the Cu/BST/TiN and Al/BST/TiN structures of the ferroelectric BST films RRAM devices exhibited good memory window properties, bipolar switching properties, and non-volatile properties for applications in non-volatile memory devices. |
| format | Article |
| id | doaj-art-eb61bddb70c947e892f046ef307decdc |
| institution | OA Journals |
| issn | 2079-4991 |
| language | English |
| publishDate | 2025-04-01 |
| publisher | MDPI AG |
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| series | Nanomaterials |
| spelling | doaj-art-eb61bddb70c947e892f046ef307decdc2025-08-20T02:28:24ZengMDPI AGNanomaterials2079-49912025-04-0115860210.3390/nano15080602Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory DevicesYao-Chin Wang0Kai-Huang Chen1Ming-Cheng Kao2Hsin-Chin Chen3Chien-Min Cheng4Hong-Xiang Huang5Kai-Chi Huang6Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 83347, TaiwanGraduate Institute of Aeronautics, Department of Information and Communication Engineering, Chaoyang University of Technology, Taichung 413310, TaiwanGraduate Institute of Aeronautics, Department of Information and Communication Engineering, Chaoyang University of Technology, Taichung 413310, TaiwanDepartment of Electronic Engineering, Cheng Shiu University, Kaohsiung 83347, TaiwanDepartment of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 71005, TaiwanDepartment of Electronic Engineering, Cheng Shiu University, Kaohsiung 83347, TaiwanDepartment of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 71005, TaiwanIn this manuscript, strontium barium titanate (BST) ferroelectric memory film materials for applications in the feasibility of applying to non-volatile RAM devices were obtained and compared. Solutions were synthesized with a proportional ratio and through the deposition of BST films on titanium nitride/silicon substrates using the sol–gel method, using rapid thermal annealing for defect repair and re-crystallization processing. The crystallization structure and surface morphology of annealed and as-deposited BST films were obtained by XPS, XRD, and SEM measurements. Additionally, the ferroelectric and resistive switching properties for the memory window, the maximum capacitance, and the leakage current were examined for Al/BST/TiN and Cu/BST/TiN structure memory devices. In addition, the first-order reaction equation of the decay reaction behavior for the BST film RRAM devices in the reset state revealed that <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>r</mi><mo>=</mo><mn>0.19</mn><msup><mrow><mo stretchy="false">[</mo><msup><mi>O</mi><mrow><mn>2</mn><mo>−</mo></mrow></msup><mo stretchy="false">]</mo></mrow><mn>1</mn></msup></mrow></semantics></math></inline-formula>. Finally, the Cu/BST/TiN and Al/BST/TiN structures of the ferroelectric BST films RRAM devices exhibited good memory window properties, bipolar switching properties, and non-volatile properties for applications in non-volatile memory devices.https://www.mdpi.com/2079-4991/15/8/602RRAMBSTbipolar switching propertiesthin filmsputtering |
| spellingShingle | Yao-Chin Wang Kai-Huang Chen Ming-Cheng Kao Hsin-Chin Chen Chien-Min Cheng Hong-Xiang Huang Kai-Chi Huang Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices Nanomaterials RRAM BST bipolar switching properties thin film sputtering |
| title | Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices |
| title_full | Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices |
| title_fullStr | Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices |
| title_full_unstemmed | Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices |
| title_short | Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices |
| title_sort | bipolar switching properties and reaction decay effect of bst ferroelectric thin films for applications in resistance random access memory devices |
| topic | RRAM BST bipolar switching properties thin film sputtering |
| url | https://www.mdpi.com/2079-4991/15/8/602 |
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