Wang, Y., Chen, K., Kao, M., Chen, H., Cheng, C., Huang, H., & Huang, K. Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices. MDPI AG.
Chicago Style (17th ed.) CitationWang, Yao-Chin, Kai-Huang Chen, Ming-Cheng Kao, Hsin-Chin Chen, Chien-Min Cheng, Hong-Xiang Huang, and Kai-Chi Huang. Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices. MDPI AG.
MLA (9th ed.) CitationWang, Yao-Chin, et al. Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices. MDPI AG.
Warning: These citations may not always be 100% accurate.