Electronic Properties and Density of States of Self-Assembled GaSb/GaAs Quantum Dots
The electronic properties of a self-assembled GaSb/GaAs QD ensemble are determined by capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS). The charging and discharging bias regions of the QDs are determined for different temperatures. With a value of 335 (±15) meV the localization...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2013-01-01
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| Series: | Journal of Nanotechnology |
| Online Access: | http://dx.doi.org/10.1155/2013/302647 |
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