Anisotropic magnetoresistance and planar Hall effect in an antiferromagnetic insulator-topological insulator heterostructure
The coupling between magnetism and topological states at a topological insulator (TI)-magnetic insulator interface can induce exchange gap opening and spin texture change, resulting in many emergent transport phenomena, including anisotropic magnetoresistance (AMR) and planar Hall effect (PHE). Whil...
Saved in:
| Main Authors: | Yuxin Liu, Yongqing Li, Jing Teng |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
American Physical Society
2025-08-01
|
| Series: | Physical Review Research |
| Online Access: | http://doi.org/10.1103/32h4-l2j6 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Antiferromagnet-topological insulator heterostructure for polarization-controllable terahertz generation
by: Yu Cheng, et al.
Published: (2025-07-01) -
Néel spin-orbit torque in antiferromagnetic quantum spin and anomalous Hall insulators
by: Junyu Tang, et al.
Published: (2025-08-01) -
Tunable magnons of an antiferromagnetic Mott insulator via interfacial metal-insulator transitions
by: Sujan Shrestha, et al.
Published: (2025-04-01) -
Detection of antiferromagnetic order in a RuO2/Pt bilayer by spin Hall magnetoresistance
by: Yuta Kobayashi, et al.
Published: (2024-11-01) -
Tailoring Dzyaloshinskii–Moriya Interaction and Spin‐Hall Topological Hall Effect in Insulating Magnetic Oxides by Interface Engineering
by: Zedong Xu, et al.
Published: (2024-09-01)