Fast-Read Storage Performance by Thyristor Operation in 3-D Flash Memory
In this work, we report the fast-read storage performance of thyristor operation in 3D flash memory. By forming a pseudo N+/P/N/P+ structure with the word line (WL) bias of 3D string cells, thyristor operation with steep switching characteristics and a high on-current can be obtained. It is known th...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10624679/ |
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