Micro-nanoscale laser subsurface vertical modification of 4H-SiC semiconductor materials: mechanisms, processes, and challenges

Micro-nanoscale laser subsurface vertical modification of 4H-SiC semiconductor materials: mechanisms, processes, and challenges

Abstract Wide-bandgap semiconductor materials, exemplified by silicon carbide (SiC), have emerged as pivotal materials in semiconductor devices due to their exceptional chemical stability, high electron mobility, and thermal stability. With the rapid development of microelectronic devices and integr...

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Bibliographic Details
Main Authors: Hongmei Li, Hongwei Wang, Yuxin Li, Xiwen Lu, Lin Li, Yinzhou Yan, Wei Guo
Format: Article
Language:English
Published: Springer 2025-07-01
Series:Discover Nano
Subjects:
Silicon carbide semiconductor
Laser modification
Wafer stripping
Nonlinear absorption
Laser pulse control
Online Access:https://doi.org/10.1186/s11671-025-04309-4
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https://doi.org/10.1186/s11671-025-04309-4

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