Characterization and simulation of AlGaN barrier structure effects in normally-off recessed gate AlGaN/GaN MISHEMTs

Characterization and simulation of AlGaN barrier structure effects in normally-off recessed gate AlGaN/GaN MISHEMTs

The objective of this study is to optimize the trade-off between threshold voltage (V _TH ) and maximum drain current (I _D,max ) in recessed gate AlGaN/GaN metal insulator semiconductor high electron mobility transistor (MISHEMT) using atomic layer etching (ALE) technology, with technical computer-...

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Main Authors: An-Chen Liu, Hsin-Chu Chen, Po-Tsung Tu, Yan-Lin Chen, Yan-Chieh Chen, Po-Chun Yeh, Chih-I Wu, Shu-Tong Chang, Tsung-Sheng Kao, Hao-Chung Kuo
Format: Article
Language:English
Published: IOP Publishing 2025-01-01
Series:Materials Research Express
Subjects:
recessed gate structure
normally-off MISHEMT
TCAD simulation
ALE process
variation of AlGaN remaining thickness
Online Access:https://doi.org/10.1088/2053-1591/adb08f
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https://doi.org/10.1088/2053-1591/adb08f

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