Defect-modulation in α-Ga2O3 molecular beam epitaxial photodetector investigated through pulsed-light persistent-photoconductivity
α-phase gallium oxide (Ga2O3) features a corundum crystal structure that closely matches the low-cost sapphire substrate commonly used in epitaxy, enabling researchers to perform precise and controllable Ga2O3 epitaxy. It thus offers an excellent material platform for the development of high-power d...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2025-06-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0266366 |
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| author | Hongliang Chang Yanqing Jia Abdullah Alquwayzani Xu Zhang Redha H. Al Ibrahim Mohamed Ben Hassine Dalaver H. Anjum Qingxiao Wang Mohamed Nejib Hedhili Jiarui Gong Qiaoqiang Gan Zhenqiang Ma Tien Khee Ng Boon S. Ooi |
| author_facet | Hongliang Chang Yanqing Jia Abdullah Alquwayzani Xu Zhang Redha H. Al Ibrahim Mohamed Ben Hassine Dalaver H. Anjum Qingxiao Wang Mohamed Nejib Hedhili Jiarui Gong Qiaoqiang Gan Zhenqiang Ma Tien Khee Ng Boon S. Ooi |
| author_sort | Hongliang Chang |
| collection | DOAJ |
| description | α-phase gallium oxide (Ga2O3) features a corundum crystal structure that closely matches the low-cost sapphire substrate commonly used in epitaxy, enabling researchers to perform precise and controllable Ga2O3 epitaxy. It thus offers an excellent material platform for the development of high-power devices and deep ultraviolet photodetectors (DUV-PDs). In this study, we altered the epitaxy properties of α-Ga2O3 grown on m-plane sapphire substrates by changing the growth parameters of oxide molecular beam epitaxy and demonstrated effective modulation of the oxygen vacancy (VO) dependent persistent photoconductivity (PPC) behavior. This gave rise to a tunable paired-pulse facilitation (PPF) index in the fabricated α-Ga2O3-based DUV-PDs. Using α-Ga2O3 grown on bare m-plane sapphire at 500 °C as a benchmark (α-Ga2O3-500 °C), we effectively altered the VO contribution by either increasing the growth temperature to 570 °C or introducing a step-graded α-(AlxGa1−x)2O3 buffer. Photoluminescence and x-ray photoelectron spectroscopy analyses verified the variations in VO incorporation within α-Ga2O3 grown under different conditions. Finally, owing to the higher incorporation of VO defects within the material, the DUV-PD fabricated based on the α-Ga2O3–500 °C sample exhibited the most pronounced PPC behavior, achieving a maximum PPF index of 143% under a −1 V bias—representing a regulation amplitude of 26.5% compared to the control devices. The dominant VO defects in α-Ga2O3 and variable range hopping led to the PPC behavior observed in the fabricated devices. Our investigation highlights the feasibility of tunable PPC performance in α-Ga2O3-based devices for x-ray to DUV detection and solar-blind neuromorphic vision systems, potentially in harsh environments. |
| format | Article |
| id | doaj-art-e87cbe48ba6845b6a0e8454581c65a64 |
| institution | Kabale University |
| issn | 2166-532X |
| language | English |
| publishDate | 2025-06-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj-art-e87cbe48ba6845b6a0e8454581c65a642025-08-20T03:29:13ZengAIP Publishing LLCAPL Materials2166-532X2025-06-01136061109061109-1210.1063/5.0266366Defect-modulation in α-Ga2O3 molecular beam epitaxial photodetector investigated through pulsed-light persistent-photoconductivityHongliang Chang0Yanqing Jia1Abdullah Alquwayzani2Xu Zhang3Redha H. Al Ibrahim4Mohamed Ben Hassine5Dalaver H. Anjum6Qingxiao Wang7Mohamed Nejib Hedhili8Jiarui Gong9Qiaoqiang Gan10Zhenqiang Ma11Tien Khee Ng12Boon S. Ooi13Photonics Laboratory, Electrical and Computer Engineering, Division of Computer, Electrical and Mathematical Sciences and Engineering (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi ArabiaPhotonics Laboratory, Electrical and Computer Engineering, Division of Computer, Electrical and Mathematical Sciences and Engineering (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi ArabiaPhotonics Laboratory, Electrical and Computer Engineering, Division of Computer, Electrical and Mathematical Sciences and Engineering (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi ArabiaPhotonics Laboratory, Electrical and Computer Engineering, Division of Computer, Electrical and Mathematical Sciences and Engineering (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi ArabiaPhotonics Laboratory, Electrical and Computer Engineering, Division of Computer, Electrical and Mathematical Sciences and Engineering (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi ArabiaImaging and Characterization Core Lab, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi ArabiaImaging and Characterization Core Lab, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi ArabiaImaging and Characterization Core Lab, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi ArabiaImaging and Characterization Core Lab, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi ArabiaDepartment of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USASustainability and Photonics Energy Research Lab, Division of Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi ArabiaDepartment of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USAPhotonics Laboratory, Electrical and Computer Engineering, Division of Computer, Electrical and Mathematical Sciences and Engineering (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi ArabiaPhotonics Laboratory, Electrical and Computer Engineering, Division of Computer, Electrical and Mathematical Sciences and Engineering (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabiaα-phase gallium oxide (Ga2O3) features a corundum crystal structure that closely matches the low-cost sapphire substrate commonly used in epitaxy, enabling researchers to perform precise and controllable Ga2O3 epitaxy. It thus offers an excellent material platform for the development of high-power devices and deep ultraviolet photodetectors (DUV-PDs). In this study, we altered the epitaxy properties of α-Ga2O3 grown on m-plane sapphire substrates by changing the growth parameters of oxide molecular beam epitaxy and demonstrated effective modulation of the oxygen vacancy (VO) dependent persistent photoconductivity (PPC) behavior. This gave rise to a tunable paired-pulse facilitation (PPF) index in the fabricated α-Ga2O3-based DUV-PDs. Using α-Ga2O3 grown on bare m-plane sapphire at 500 °C as a benchmark (α-Ga2O3-500 °C), we effectively altered the VO contribution by either increasing the growth temperature to 570 °C or introducing a step-graded α-(AlxGa1−x)2O3 buffer. Photoluminescence and x-ray photoelectron spectroscopy analyses verified the variations in VO incorporation within α-Ga2O3 grown under different conditions. Finally, owing to the higher incorporation of VO defects within the material, the DUV-PD fabricated based on the α-Ga2O3–500 °C sample exhibited the most pronounced PPC behavior, achieving a maximum PPF index of 143% under a −1 V bias—representing a regulation amplitude of 26.5% compared to the control devices. The dominant VO defects in α-Ga2O3 and variable range hopping led to the PPC behavior observed in the fabricated devices. Our investigation highlights the feasibility of tunable PPC performance in α-Ga2O3-based devices for x-ray to DUV detection and solar-blind neuromorphic vision systems, potentially in harsh environments.http://dx.doi.org/10.1063/5.0266366 |
| spellingShingle | Hongliang Chang Yanqing Jia Abdullah Alquwayzani Xu Zhang Redha H. Al Ibrahim Mohamed Ben Hassine Dalaver H. Anjum Qingxiao Wang Mohamed Nejib Hedhili Jiarui Gong Qiaoqiang Gan Zhenqiang Ma Tien Khee Ng Boon S. Ooi Defect-modulation in α-Ga2O3 molecular beam epitaxial photodetector investigated through pulsed-light persistent-photoconductivity APL Materials |
| title | Defect-modulation in α-Ga2O3 molecular beam epitaxial photodetector investigated through pulsed-light persistent-photoconductivity |
| title_full | Defect-modulation in α-Ga2O3 molecular beam epitaxial photodetector investigated through pulsed-light persistent-photoconductivity |
| title_fullStr | Defect-modulation in α-Ga2O3 molecular beam epitaxial photodetector investigated through pulsed-light persistent-photoconductivity |
| title_full_unstemmed | Defect-modulation in α-Ga2O3 molecular beam epitaxial photodetector investigated through pulsed-light persistent-photoconductivity |
| title_short | Defect-modulation in α-Ga2O3 molecular beam epitaxial photodetector investigated through pulsed-light persistent-photoconductivity |
| title_sort | defect modulation in α ga2o3 molecular beam epitaxial photodetector investigated through pulsed light persistent photoconductivity |
| url | http://dx.doi.org/10.1063/5.0266366 |
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